Prediction and quality control of the melt index during production of high-density polyethylene

In polyolefin processes the melt index (MI) is the most important control variable indicating product quality. Because of the difficulty in the on-line measurement of MI, a lot of MI estimation and correlation methods have been proposed. In this work a new dynamic MI estimation scheme is developed based on system identification techniques. The empirical MI estimation equation proposed in the present study is derived from the 1 ^st -order dynamic models. Effectiveness of the present estimation scheme was illustrated by numerical simulations based on plant operation data including grade change operations in high density polyethylene (HDPE) processes. From the comparisons with other estimation methods it was found that the proposed estimation scheme showed better performance in MI predictions. The virtual sensor model developed based on the estimation scheme was combined with the virtual on-line analyzer (VOA) to give a quality control system to be implemented in the actual HDPE plant. From the application of the present control system, significant reduction of transition time and the amount of off-spec during grade changes was achieved     

Highly Stretchable or Transparent Conductor Fabrication by a Hierarchical Multiscale Hybrid Nanocomposite

As is frequently seen in sci‐fi movies, future electronics are expected to ultimately be in the form of wearable electronics. To realize wearable electronics, the electric components should be soft, flexible, and even stretchable to be human‐friendly. An important step is presented toward realization of wearable electronics by developing a hierarchical multiscale hybrid nanocomposite for highly flexible, stretchable, or transparent conductors. The hybrid nanocomposite combines the enhanced mechanical compliance, electrical conductivity, and optical transparency of small CNTs (d ≈ 1.2 nm) and the enhanced electrical conductivity of relatively bigger Ag nanowire (d ≈ 150 nm) backbone to provide efficient multiscale electron transport path with Ag nanowire current backbone collector and local CNT percolation network. The highly elastic hybrid nanocomposite conductors and highly transparent flexible conductors can be mounted on any non‐planar or soft surfaces to realize human‐friendly electronics interface for future wearable electronics.     

Aggregative and stochastic model of main path identification: a case study on graphene

This paper suggests a new method to search main path, as a knowledge trajectory, in the citation network. To enhance the performance and remedy the problems suggested by other researchers for main path analysis (Hummon and Doreian, Social Networks 11(1): 39–63, 1989), we applied two techniques, the aggregative approach and the stochastic approach. The first technique is used to offer improvement of link count methods, such as SPC, SPLC, SPNP, and NPPC, which have a potential problem of making a mistaken picture since they calculate link weights based on a individual topology of a citation link; the other technique, the second-order Markov chains, is used for path dependent search to improve the Hummon and Doreian’s priority first search method. The case study on graphene that tested the performance of our new method showed promising results, assuring us that our new method can be an improved alternative of main path analysis. Our method’s beneficial effects are summed up in eight aspects: (1) path dependent search, (2) basic research search rather than applied research, (3) path merge and split, (4) multiple main paths, (5) backward search for knowledge origin identification, (6) robustness for indiscriminately selected citations, (7) availability in an acyclic network, (8) completely automated search.     

Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications

In this letter, we study Terbium (Tb)-incorporated TaN (TaTb/sub x/N) as a thermally robust N-type metal gate electrode for the first time. The work function of the Ta/sub 0.94/Tb/sub 0.06/N/sub y/ metal gate is determined to be /spl sim/4.23 eV after rapid thermal anneal at 1000/spl deg/C for 30 s, and can be further tuned by varying the Tb concentration. Moreover, the TaTb/sub x/N-SiO/sub 2/ gate stack exhibits excellent thermal stability up to 1000/spl deg/C with no degradation to the equivalent oxide thickness, gate leakage, and time-dependent dielectric breakdown (TDDB) characteristics. These results suggest that Tb-incorporated TaN (TaTb/sub x/N) could be a promising metal gate candidate for n-MOSFET in a dual-metal gate Si CMOS process.     

Reduction of lipid peroxidation and H2O2‐mediated DNA damage by a red alga (Grateloupia filicina) methanolic extract

The antioxidant activity of an extract of Grateloupia filicina was evaluated using linoleic acid and fish oil as substrates in an induct period at 65 °C. Furthermore, the algal extract was subjected to comet assay to evaluate its protecting ability for H₂O₂‐induced DNA damage in rat lymphocytes. Progression of oxidation was examined using weight gain, peroxide value (PV), 2‐thiobarbituric acid reactive substances and conjugated diene data. Effectiveness of the extract at 0.03 and 0.05% levels was superior to that of α‐tocopherol at 0.01% and the activity of 0.05% extract was higher than that of butylated hydroxyanisole and butylated hydroxytoluene at 0.01%. Also, the algal extract significantly inhibited H₂O₂ induced DNA damage in comet assay. The maximum DNA damage inhibition (68.9%) was recorded from the 50 µg ml⁻¹ alga extract when the rat lymphocyte cells were treated with 50 µM H₂O₂. Copyright © 2005 Society of Chemical Industry     

Electrical and optical activation studies of Si-implanted GaN

Comprehensive and systematic electrical and optical activation studies of Si-implanted GaN were made as a function of ion dose and anneal temperature. Silicon ions were implanted at 200 keV with doses ranging from 1×10¹³ cm^?2 to 5×10¹⁵ cm^?2 at room temperature. The samples were proximity-cap annealed from 1050°C to 1350°C with a 500-Å-thick AlN cap in a nitrogen environment. The optimum anneal temperature for high dose implanted samples is approximately 1350°C, exhibiting nearly 100% electrical activation efficiency. For low dose (≤5×10¹⁴ cm^?2) samples, the electrical activation efficiencies continue to increase with an anneal temperature through 1350°C. Consistent with the electrical results, the photoluminescence (PL) measurements show excellent implantation damage recovery after annealing the samples at 1350°C for 20 sec, exhibiting a sharp neutral-donor-bound exciton peak along with a sharp donor-acceptor pair peak. The mobilities increase with anneal temperature, and the highest mobility obtained is 250 cm²/Vs. The results also indicate that the AlN cap protected the implanted GaN layer during high-temperature annealing without creating significant anneal-induced damage.     

Benefits of all work and no play: The relationship between neuroticism and performance as a function of resource allocation.

The authors evaluate a model suggesting that the performance of highly neurotic individuals, relative to their stable counterparts, is more strongly influenced by factors relating to the allocation of attentional resources. First, an air traffic control simulation was used to examine the interaction between effort intensity and scores on the Anxiety subscale of Eysenck Personality Profiler Neuroticism in the prediction of task performance. Overall effort intensity enhanced performance for highly anxious individuals more so than for individuals with low anxiety. Second, a longitudinal field study was used to examine the interaction between office busyness and Eysenck Personality Inventory Neuroticism in the prediction of telesales performance. Changes in office busyness were associated with greater performance improvements for highly neurotic individuals compared with less neurotic individuals. These studies suggest that highly neurotic individuals outperform their stable counterparts in a busy work environment or if they are expending a high level of effort. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-/spl kappa/ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO/sub 2/+Hf/spl rarr/HfO/sub 2/+Ge and 3GeO/sub 2/+4Al/spl rarr/2Al/sub 2/O/sub 3/+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO/sub 2/, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10/sup 6/ rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices.     

Method of moments analysis of EM fields in a multilayered spheroid radiated by a thin circular loop antenna

This paper presents derivation and computation of electromagnetic (EM) fields inside a dielectric prolate spheroid radiated by a loop antenna. The dielectric spheroid is considered to be multilayered, and a thin circular loop antenna that is loaded by a voltage source radiates on the top of the prolate spheroid. The multiple interaction of transmitted and reflected waves with the spheroid is characterized by applying the method of moments (MoM) to both the circular loop antenna wire and the stratified spheroidal interfaces. The dyadic Green's function in the expansion form of eigenvector wave functions is used to derive the EM fields, so the formulation is quite compact. Different basis and weighting functions are used inside the method of moments procedure for obtaining in an efficient way the unknown current distributions along the antenna wire and the unknown expansion coefficients of their resulted EM fields. Current distributions and the transmitted fields inside the spheroidal model are computed numerically and the convergence issues are discussed.